Research Articles/ Conferences

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    Performance Analysis of Double Material Cylindrical Surrounding Gate Mosfet
    (IEEE, 2026-01-25) Nupur Mittal, Piyush Charan, Imran Ullah Khan, Zohaib Hasan Khan
    The investigation explored how self-heating and temperature sensitivity impact the linearity of a double-material cylindrical surrounding gate MOSFET. Results indicate that self-heating can reduce the device's linearity by decreasing transconductance and increasing output conductance. Temperature sensitivity affects the device's mobility and threshold voltage. Hence, it is essential to count on these factors during the planning and assessment of double-material cylindrical surrounding gate MOSFETs (DMCSG MOSFET) to guarantee peak performance. The study utilized a TCAD 3-D device simulator to obtain these results. The DMCSG MOSFET is an innovative transistor design that demonstrates improved performance characteristics compared to standard MOSFETs. This device utilizes a double material cylindrical gate surrounding the channel to enhance control and improve electrostatic integrity, resulting in better transistor performance. With its cylindrical gate structure enclosing the channel, the DMCSG MOSFET achieves superior gate control while minimizing short channel effects. By incorporating two different materials in the gate, it enhances electrostatic integrity, reducing gate leakage and improving device reliability. This transistor design also presents several advantages over traditional planar MOSFETs. The cylindrical gate geometry enables better electrostatic control, resulting in reduced power consumption and improved switching speed. Moreover, the DMCSG MOSFET demonstrates outstanding scalability, rendering it fitting for cutting-edge integrated circuit designs. Within this abstract, we provide a synopsis of the DMCSG MOSFET's pivotal characteristics, encompassing its dualmaterial surrounding gate configuration and enhanced electrostatic management. We emphasize its benefits over traditional MOSFETs, such as diminished power consumption, heightened switching speed, and augmented scalability. The DMCSG MOSFET shows great potential for use in high-performance electronic devices and integrated circuits, paving the way for advancements in the field of semiconductor technology.
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    Simulation of Carbon Nanotube FETs for Power-Efficient Digital Circuits
    (IEEE, 2026-01-23) Imran Ullah Khan, Somendra Shukla, Rani Kiran, Nupur Mittal, Mohd. Amir Ansari
    This work addresses the limitations of silicon scaling by exploring Carbon Nanotube FETs (CNTFETs) as alternatives. Schottky Barrier CNTFETs (SBCNTFETs) suffer from ambipolar currents, which reduce the Ion/Ioff ratio; this can be improved through optimised design parameters. A Double Gate (DG) structure is modelled to enhance gate control, achieving better Ion/Ioff ratio (5.55×105) and subthreshold swing (87.3mV/ decade). A mathematical model for DG-SBCNTFET is developed and validated with Nano TCAD ViDES simulations. Using optimised parameters, a DG-SBCNTFET-based 6T SRAM cell is designed and simulated in HSPICE, demonstrating 20% lower power dissipation compared to a conventional CNTFET SRAM cell without compromising stability.