Performance Analysis of Double Material Cylindrical Surrounding Gate Mosfet

Abstract

The investigation explored how self-heating and temperature sensitivity impact the linearity of a double-material cylindrical surrounding gate MOSFET. Results indicate that self-heating can reduce the device's linearity by decreasing transconductance and increasing output conductance. Temperature sensitivity affects the device's mobility and threshold voltage. Hence, it is essential to count on these factors during the planning and assessment of double-material cylindrical surrounding gate MOSFETs (DMCSG MOSFET) to guarantee peak performance. The study utilized a TCAD 3-D device simulator to obtain these results. The DMCSG MOSFET is an innovative transistor design that demonstrates improved performance characteristics compared to standard MOSFETs. This device utilizes a double material cylindrical gate surrounding the channel to enhance control and improve electrostatic integrity, resulting in better transistor performance. With its cylindrical gate structure enclosing the channel, the DMCSG MOSFET achieves superior gate control while minimizing short channel effects. By incorporating two different materials in the gate, it enhances electrostatic integrity, reducing gate leakage and improving device reliability. This transistor design also presents several advantages over traditional planar MOSFETs. The cylindrical gate geometry enables better electrostatic control, resulting in reduced power consumption and improved switching speed. Moreover, the DMCSG MOSFET demonstrates outstanding scalability, rendering it fitting for cutting-edge integrated circuit designs. Within this abstract, we provide a synopsis of the DMCSG MOSFET's pivotal characteristics, encompassing its dualmaterial surrounding gate configuration and enhanced electrostatic management. We emphasize its benefits over traditional MOSFETs, such as diminished power consumption, heightened switching speed, and augmented scalability. The DMCSG MOSFET shows great potential for use in high-performance electronic devices and integrated circuits, paving the way for advancements in the field of semiconductor technology.