Whale Optimization for Parameters Estimation of 4H-SiC MESFET Including Trappings and Thermal Effects

Abstract

4H-SiC MESFETs are used for many applications including home, industries, and many more. Many approaches are available to analyze the model of the 4H-SiC MESFETs. The examination of MESFETs in relation to their direct current characteristics is a complex endeavor. This paper focuses on three primary factors that influence these characteristics: surface trapping, thermal effects, and substrate trapping. By exploring these effects, we aim to provide a clearer understanding of the DC behavior of MESFETs. The model for the current-voltage (I-V) characteristics that we present is based on the Caughey-Thomas configuration. This model effectively addresses the trapping of electrons in the substrate through various deep-level trapping mechanisms, takes into account the field-dependent mobility of electrons, and provides a detailed analysis of the two-dimensional charge distribution that occurs beneath the gate of the MESFET. This proposed method is comprehensive, accounting for all significant thermal effects and material flaws, including traps. Despite the challenges posed by the complexity of intricate mathematical equations associated with the 4H-SiC MESFET, which are essential for deriving accurate I-V characteristics across different operational regions, a solution is sought. To tackle this issue, the Whale Optimization Algorithm (WOA) is utilized, enabling the effective resolution of multiple complex equations related to the 4H-SiC MESFET. This approach ensures that the resulting I-V characteristics are precise and reliable. As a result, the performance of the analytical model developed closely mirrors that of a real 4H-SiC MESFET. Additionally, various behavioral traits of the model are obtained and thoroughly evaluated using the MATLAB programming.