Nanoscale Transistors: device physics, modeling and simulation Mark S. Lundstrom and Jing Guo [Text]

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TextLanguage: English Publication details: New Delhi Springer 2008Description: vii, 217 p.; 25 cmISBN:

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Holdings
Item type	Current library	Collection	Call number	Copy number	Status	Notes	Barcode
TEXT BOOK	CENTRAL LIBRARY	ELECTRICAL	621.381528 LUN/N (Browse shelf(Opens below))		Available	Electronics	D03144
RESERVE BOOKS	CENTRAL LIBRARY		621.381528 LUN/N (Browse shelf(Opens below))	1	Not For Loan	032767	032767
RESERVE BOOKS	CENTRAL LIBRARY		621.381528 LUN/N (Browse shelf(Opens below))	2	Not For Loan	033559	033559

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Previous	621.381522 SEM;1 Semiconductor Lasers I: fundamentals	621.381522 SEM;1 Semiconductor Lasers I: fundamentals	621.381528 LUN/N Nanoscale Transistors: device physics, modeling and simulation	621.381528 LUN/N Nanoscale Transistors: device physics, modeling and simulation	621.3815284 WAR/M MOSFET :theory and design	621.3815284 WAR/M MOSFET :theory and design	621.3815287 DUB/T Thyristorised Power Controllers	Next

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