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Ferroelectric Thin Films: basic properties and device pysics for memory applications Masanori Okuyama ed. [Text]
Material type:
TextLanguage: English Publication details: Berlin Springer-Verlag 2005Description: xiii, 244p. ; 25cmISBN: - 9783540241638
- 621.39732 FER
| Item type | Current library | Call number | Copy number | Status | Notes | Date due | Barcode | |
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RESERVE BOOKS
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CENTRAL LIBRARY | 621.39732 FER (Browse shelf(Opens below)) | 1 | Not For Loan | 036659 | 036659 | ||
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RESERVE BOOKS
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CENTRAL LIBRARY | 621.39732 FER (Browse shelf(Opens below)) | 2 | Not For Loan | 036660 | 036660 |
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| 621.39732 BAK/C CMOS: circuits Design, Layout,and Simulation | 621.39732 BAK/C CMOS Mixed-Signal Circuit Design | 621.39732 BAK/C CMOS Mixed-Signal Circuit Design vol-II of CMOS:circuit design , layout and simulation | 621.39732 FER Ferroelectric Thin Films: basic properties and device pysics for memory applications | 621.39732 FER Ferroelectric Thin Films: basic properties and device pysics for memory applications | 621.39732 FER/L Low-Voltage Low-Power CMOS Current Conveyors | 621.39732 KIR/F Fundamentals of CMOS VLSI Design |
Includes Index.
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